收藏本站
TrenchMV TM
Power MOSFET
IXTA60N10T
IXTP60N10T
V DSS
I D25
R DS(on)
= 100V
= 60A
≤ 18m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
G
S
(TAB)
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
100
100
± 30
V
V
V
TO-220 (IXTP)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
60
180
10
500
A
A
A
mJ
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
176
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
300
260
1.13/10
2.5
3.0
° C
° C
Nm/lb.in
g
g
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low R DS(on)
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 50 μ A
I GSS V GS = ± 20V, V DS = 0V
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
± 100 nA
Applications
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching Applications
Distributed Power Architechtures
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 25A, Notes 1, 2
14.8
1 μ A
100 μ A
18 m Ω
and VRMs
Electronic Valve Train Systems
High Voltage Synchronous Recifier
? 2007 IXYS CORPORATION, All rights reserved
DS99647B(08/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTA6N50D2 MOSFET N-CH 500V 6A D2PAK
IXTA6N50P MOSFET N-CH 500V 6A D2-PAK
IXTA70N075T2 MOSFET N-CH 75V 70A TO-263
IXTA76N075T MOSFET N-CH 75V 76A TO-263
IXTA80N10T7 MOSFET N-CH 100V 80A TO-263-7
IXTA80N10T MOSFET N-CH 100V 80A TO-263
IXTA88N085T7 MOSFET N-CH 85V 88A TO-263-7
IXTA88N085T MOSFET N-CH 85V 88A TO-263
相关代理商/技术参数
IXTA60N20T 功能描述:MOSFET 60 Amps 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA62N15P 功能描述:MOSFET 62 Amps 150V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA62N25T 功能描述:MOSFET 62 Amps 250V 50 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA6N100D2 功能描述:MOSFET N-CH MOSFETS (D2) 1000V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA6N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA6N50P 功能描述:MOSFET 6 Amps 500V 1.1 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA70N075T2 功能描述:MOSFET 70 Amps 75V 0.0120 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA70N085T 功能描述:MOSFET 50 Amps 85V 20.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube